2 The IFS and MOS designs

For the present analysis the MOS and IFS designs are characterised as follows:

MOS

• FOV: 3.4' x 3.4'
• Micro-mirror dimensions: 0.1'' x 0.1''
• Micro-mirror array: 2K x 2K
• Detector: 4K x 4K
• Troughput: 0.5
• R=150 (300 l/mm grating) and 0.2'' slit
• Requires two exposures to cover 0.8-5.2 microns

nb. The MOS can, of course, operate at higher spectral resolutions although such modes are not considered here.

IFS-LR (low-resolution)

• FOV: 40'' x 46''
• Spatial sampling element size (hereafter, s.e.): 0.18'' x 0.18''
• Detector: 6 x (2K x 2K)
• Troughput: 0.5
• R=150 (prism)
• Covers 0.8-5.2 in a single exposure with two spectrograph channels.

IFS-HR (high-resolution)

• FOV: 3.8'' x 2.6''
• s.e.: 0.05'' x 0.05''
• Detector: 4 x (2K x 2K)
• Troughput: 0.5
• R=3000 (grating)